 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA503T P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) The PA503T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. 0.32 -0.05 +0.1 +0.1 PACKAGE DIMENSIONS (in millimeters) +0.1 FEATURES * Two source common MOS FET circuits in package * Complement to PA502T * Automatic mounting supported 2.8 0.2 the same size as SC-59 1.5 0.65 -0.15 0.16 -0.06 0 to 0.1 0.95 0.95 1.9 0.8 1.1 to 1.4 2.9 0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse)* PT Tch Tstg RATINGS -50 +16 -100 -200 300 (TOTAL) 150 -55 to +150 UNIT V V mA mA mW C C PIN CONNECTION (Top view) * PW 10 ms, Duty Cycle 50 % Document No. G11239EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 1996 PA503T ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VGS(on) = -4.0 V, RG = 10 VDD = -5.0 V, ID = -10 mA RL = 500 TEST CONDITIONS VDS = -50 V, VGS = 0 VGS = +16 V, VDS = 0 VDS = -5.0 V, ID = -1.0 A VDS = -5.0 V, ID = -10 mA VGS = -4.0 V, ID = -10 mA VGS = -10 V, ID = -10 mA VDS = -5.0 V, VGS = 0, f = 1.0 MHz -1.5 15 60 40 17 9 1 45 75 25 80 100 60 -1.9 MIN. TYP. MAX. -1.0 +10 -2.5 UNIT A A V mS pF pF pF ns ns ns ns Marking: CA SWITCHING TIME MEASUREMENT CIRCUIT AND MEASUREMENT CONDITIONS (RESISTANCE LOADED) VGS DUT RL Gate Voltage Waveform ID td(on) Drain Current Waveform 0 VGS = 1 s Duty cycle 1 % tr td(off) tf 10 % VGS(on) 90 % VDD RG PG. 0 10 % ID 10 % 90 % 90 % 2 PA503T TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 350 Free air PT - Total Power Dissipation - mW 100 dT - Derating factor - % 80 60 40 20 300 250 200 150 100 50 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TO Pe ro ne TA L it un 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 TC - Case Temperature - C TA - Ambient Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -120 -100 ID - Drain Current - mA -80 -60 -40 -20 VGS = -4 V Pulsed measurement -10 V -8 V -100 -6 V -10 ID - Drain Current - mA TRANSFER CHARACTERISTICS -1 TA = 150 C 75 C -0.1 25 C -25 C -0.01 VDS = -5.0 V Pulsed measurement -10 -15 0 -2 -4 -6 -8 -10 -12 -14 -0.001 0 -5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -2.4 |yfs| - Forward Transfer Admittance - mS VGS(off) - Gate Cut-off Voltage - V -2.2 -2.0 -1.8 -1.6 -1.4 -1.2 -30 VDS = -5.0 V ID = -1 A 100 50 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = -5.0 V 20 10 5 TA = -25 C 25 C 75 C 150 C 2 1-1 0 30 60 90 120 150 -2 -5 -10 -20 -50 -100 Tch - Channel Temperature - C ID - Drain Current - mA 3 PA503T DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed measurement ID = -1 mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 150 VGS = -4 V Pulsed measurement TA = 150 C 100 75 C 25 C 50 -25 C RDS(on) - Drain to Source On-State Resistance - ID = -10 mA 50 RDS(on) - Drain to Source On-State Resistance - 0 -4 -8 -12 -16 -20 0 -1 -2 -5 -10 -20 -50 -100 VGS - Gate to Source Voltage - V ID - Drain Current - mA RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 140 120 100 80 60 40 20 -30 VGS = -4 V ID = -10 mA Pulsed measurement 100 50 Ciss, Coss, Crss - Capacitance - pF 20 10 5 2 1 0.5 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 f = 1 MHz Ciss Coss Crss 0.2 0 30 60 90 120 150 0.1 0.1 -1 -2 -5 -10 -20 -50 -100 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 500 td(on), tr, td(off), tf - Switching Time - ns tr VDD = -5.0 V VGS = -4 V RG = 10 ID - Drain Current - mA 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 200 100 50 10 td(on) tf 20 10 5 -5 td(off) 1 -10 -20 -50 -100 -200 -500 0.1 0.5 0.6 0.7 0.8 0.9 1 ID - Drain Current - mA VSD - Source to Drain Voltage - V 4 PA503T REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 |
Price & Availability of UPA503T
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |